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| NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ISSUE 3 APRIL 94 FEATURES * 15 Volt VCEO * fT=600 MHz APPLICATIONS * VHF/UHF operation ZTX320 ZTX321 ZTX322 ZTX323 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 30 15 3 100 500 300 E-Line TO92 Compatible VALUE UNIT V V V mA mA mW C -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter ZTX320, ZTX322 Saturation Voltage ZTX323 ZTX321 Base-Emitter ZTX320, ZTX322 Saturation Voltage ZTX323 ZTX321 Static Forward Current Transfer Ratio Output Capacitance Input Capacitance Transition Frequency at f=100MHz Noise Figure Power Gain ZTX320, ZTX321 ZTX322 ZTX323 SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE Cobo Cibo fT N gpe 3-159 600 400 6 typical 15 20 20 100 MIN. 30 15 3 0.01 0.2 0.4 0.4 0.4 1.0 1.0 1.0 300 150 300 1.7 1.6 pF pF MHz MHz dB dB MAX. UNIT V V V A A CONDITIONS. IC=10A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 VCB=15V, IE=0 VEB=2V, IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mA IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mA IC=3mA, VCE=1V IC=3mA, VCE=1V IC=3mA, VCE=1V VCB=10V, f=1MHz VEB=0.5V, f=1MHz IC=4mA, VCE=10V IC=30mA, VCE=10V IE=1mA, VCE=6V RS=400, f=60MHz IC=6mA, VCB=12V f=200MHz V V V V V V ZTX320 ZTX321 ZTX322 ZTX323 TYPICAL CHARACTERISTICS PD - Power Dissipation (Watts) 1000 0.4 800 0.3 fT - MHz 600 VCE=10V f=100MHz 0.2 400 200 0.1 0 0 5 10 15 20 25 0 -60 -20 0 20 60 100 140 180 IC (mA) T - Temperature (C) fT v IC Derating Curve 3-160 |
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